Thermodynamic computations of the interaction coefficients between boron and phosphorus and common impurity elements in liquid silicon

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Thermodynamic computations of the interaction coefficients between boron and phosphorus and common impurity elements in liquid silicon

Halvor Dalaker

SINTEF Materials and Chemistry, 7465 Trondheim, Norway.

DOI:

https://doi.org/10.7494/cmms.2013.3.0459

Abstract:

Using the thermodynamic software FACT, and the SINTEF database for high purity silicon, the interaction coefficients between the doping elements boron and phosphorus and a range of impurity elements (Al, C, Ca, Cr, Cu, Fe, Mg, Mn, Mo, N, Na, Ni, O, Sn, Ti, V, Zn, Zr) have been calculated in liquid silicon in the temperature range 1420-1620oC. The calculations predict significant interactions between boron and phosphorus and all the evaluated elements, except between phosphorus and nitrogen, where no significant interaction was found.

Cite as:

Dalaker, H. (2013). Thermodynamic computations of the interaction coefficients between boron and phosphorus and common impurity elements in liquid silicon. Computer Methods in Materials Science, 13(3), 407 – 411. https://doi.org/10.7494/cmms.2013.3.0459

Article (PDF):

Keywords:

Thermodynamics, Interaction coefficients, Solar grade, Silicon

References: